MDT15N054PTRH

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The MDT15N054PTRH from Magnachip Technology is an N-Channel Enhancement Mode Trench MOSFET that is ideal for DC/DC and AC/DC converters, brushed and BLDC motor drive systems, and load switch applications. It has a drain-source breakdown voltage of over 150 V, a gate threshold voltage of 3.0 V, and a drain-source on-resistance of less than 5.40 milli-ohms. The MOSFET has a continuous drain current of up to 167 A and a power dissipation of less than 395 W. It is based on Trench power MOSFET technology and is 100% avalanche tested to ensure enhanced avalanche ruggedness. This RoHS-compliant MOSFET is available in a surface-mount package that measures 9.70 x 11.48 x 2.20 mm.

Product Specifications

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Product Details

  • Part Number
    MDT15N054PTRH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    150 V N-Channel Enhancement Mode Trench MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    9.70 x 11.48 x 2.20 mm
  • Continous Drain Current
    167 A
  • Drain Source Resistance
    5.40 milli-ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    90 nC
  • Power Dissipation
    395 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TOLL
  • Applications
    DC/DC and AC/DC converters, Brushed and BLDC Motor drive systems, Load switch

Technical Documents