The MDU04N070RH from Magnachip Semiconductor is an N-Channel Trench MOSFET that is ideal for synchronous rectification, switching, and general-purpose applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of 1.9 V, and a drain-source on-resistance of less than 7 milli-ohms. This MOSFET has a continuous drain current of up to 77 A and power dissipation of less than 66 W. It integrates Magnachip’s advanced MOSFET technology, resulting in high performance, fast switching performance, and excellent quality. This RoHS-compliant Trench MOSFET is 100% avalanche tested and operates over a temperature range from -55°C to +150°C. It is available in a surface-mount package that measures 4.5 x 5.9 mm.