The MDWC0151ERH from Magnachip Semiconductor is a Dual N-Channel Trench MOSFET that is ideal for portable battery protection applications. This trench MOSFET has a drain-source voltage of less than 24 V, a gate-source voltage of up to 12 V, and a drain-source on-resistance of less than 2.8 mΩ. This MOSFET has a continuous drain current of 22 A and a power dissipation of up to 2.2 W. It integrates Magnachip's advanced MOSFET technology that ensures excellent reliability and delivers high performance in on-state resistance. 

This RoHS-compliant MOSFET offers low source-source resistance, and low gate charge operation, thereby achieving optimal performance. It is available in a wafer-level package that measures 3.2 x 2.1 x 0.1 mm.