MDWC0151ERH

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The MDWC0151ERH from Magnachip Semiconductor is a Dual N-Channel Trench MOSFET that is ideal for portable battery protection applications. This trench MOSFET has a drain-source voltage of less than 24 V, a gate-source voltage of up to 12 V, and a drain-source on-resistance of less than 2.8 mΩ. This MOSFET has a continuous drain current of 22 A and a power dissipation of up to 2.2 W. It integrates Magnachip's advanced MOSFET technology that ensures excellent reliability and delivers high performance in on-state resistance. 

This RoHS-compliant MOSFET offers low source-source resistance, and low gate charge operation, thereby achieving optimal performance. It is available in a wafer-level package that measures 3.2 x 2.1 x 0.1 mm.

Product Specifications

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Product Details

  • Part Number
    MDWC0151ERH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    24 V Dual N-Channel Trench Power MOSFET for Battery Protection Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    3.2 mm x 2.1 mm
  • Number of Channels
    Dual
  • Continous Drain Current
    22 A
  • Drain Source Resistance
    2.8 milliohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.8 V
  • Gate Charge
    74 nC
  • Power Dissipation
    2.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Wafer
  • Package
    WLCSP
  • Applications
    Portable Battery Protection

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