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MMD60R175S6ZRH

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The MMD60R175S6ZRH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 11 to 18 A, Drain Source Resistance 0.156 to 0.175 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for MMD60R175S6ZRH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMD60R175S6ZRH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -25 to 25 V, 28.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 to 18 A
  • Drain Source Resistance
    0.156 to 0.175 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    28.6 nC
  • Switching Speed
    5.6 to 93 ns
  • Power Dissipation
    72 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    PFC Power Supply Stages, Switching Applications, Adapter, DC-DC Converters

Technical Documents
View details on the manufacturer's website
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