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MMD60R650RFZRH

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The MMD60R650RFZRH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 5.0 to 8.0 A, Drain Source Resistance 0.59 to 0.65 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 3.0 to 5.0 V. Tags: Surface Mount. More details for MMD60R650RFZRH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMD60R650RFZRH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -25 to 25 V, 13.0 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.0 to 8.0 A
  • Drain Source Resistance
    0.59 to 0.65 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    3.0 to 5.0 V
  • Gate Charge
    13.0 nC
  • Switching Speed
    17.0 to 40 ns
  • Power Dissipation
    46.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Soft-switching Applications, Motor drive, Adapters, Lighting

Technical Documents
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