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MMD60R900QRH

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The MMD60R900QRH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 2.8 to 4.4 A, Drain Source Resistance 0.76 to 0.90 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for MMD60R900QRH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMD60R900QRH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 9.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.8 to 4.4 A
  • Drain Source Resistance
    0.76 to 0.90 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    9.6 nC
  • Switching Speed
    14 to 56 ns
  • Power Dissipation
    37 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    PFC power supply stages, Switching applications, Adapter

Technical Documents
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