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MMFA60R1K0RFZTH

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The MMFA60R1K0RFZTH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 1.9 to 3.0 A, Drain Source Resistance 0.91 to 1.01 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 3.0 to 5.0 V. Tags: Through Hole. More details for MMFA60R1K0RFZTH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMFA60R1K0RFZTH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -25 to 25 V, 7.2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.9 to 3.0 A
  • Drain Source Resistance
    0.91 to 1.01 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    3.0 to 5.0 V
  • Gate Charge
    7.2 nC
  • Switching Speed
    9.8 to 24.7 ns
  • Power Dissipation
    25.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220FA
  • Applications
    Soft-switching Applications, Server Power Supply, Telecom, EV charging

Technical Documents
View details on the manufacturer's website
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