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MMP25R210RZTH

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The MMP25R210RZTH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 8.7 to 13.8 A, Drain Source Resistance 0.18 to 0.21 ohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for MMP25R210RZTH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMP25R210RZTH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -25 to 25 V, 17.0 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.7 to 13.8 A
  • Drain Source Resistance
    0.18 to 0.21 ohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    17.0 nC
  • Switching Speed
    13 to 52 ns
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching applications, DC-DC converters, Motor control

Technical Documents
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