MCTL2D0N10YHR

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MCTL2D0N10YHR Image

The MCTL2D0N10YHR is an N-Channel Split Gate Trench MOSFET that is designed for motor drives, power supply units, DC-DC converters, and battery management systems. It has a drain-source voltage of 100 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of 2.0 milli-ohms. This MOSFET offers a wide Safe Operating Area (SOA) that ensures robust operation even under extreme conditions. It has a high-density cell design that significantly reduces conduction losses. This MOSFET is encased in a compact TOLL-8L format, optimized for excellent heat dissipation, and is well-suited for thermally challenging environments. It is moisture sensitivity level 1 certified for meeting challenges in high-humidity conditions. This RoHS-compliant MOSFET is available in a surface-mount package that measures 10.10 x 11.88 mm.

Product Specifications

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Product Details

  • Part Number
    MCTL2D0N10YHR
  • Manufacturer
    Micro Commercial Components
  • Description
    100 V N-Channel Split Gate Trench MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    300 A
  • Drain Source Resistance
    1.6 to 2 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.2 to 3.8 V
  • Gate Charge
    89 nC
  • Power Dissipation
    333 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TOLL-8L

Technical Documents

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