The MCTL2D0N10YHR is an N-Channel Split Gate Trench MOSFET that is designed for motor drives, power supply units, DC-DC converters, and battery management systems. It has a drain-source voltage of 100 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of 2.0 milli-ohms. This MOSFET offers a wide Safe Operating Area (SOA) that ensures robust operation even under extreme conditions. It has a high-density cell design that significantly reduces conduction losses. This MOSFET is encased in a compact TOLL-8L format, optimized for excellent heat dissipation, and is well-suited for thermally challenging environments. It is moisture sensitivity level 1 certified for meeting challenges in high-humidity conditions. This RoHS-compliant MOSFET is available in a surface-mount package that measures 10.10 x 11.88 mm.