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2N6661

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2N6661 Image

The 2N6661 from Microchip Technology is a MOSFET with Continous Drain Current 0.35 A, Drain Source Resistance 4000 to 5000 milliohm, Drain Source Breakdown Voltage 90 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2 V. Tags: Through Hole. More details for 2N6661 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2N6661
  • Manufacturer
    Microchip Technology
  • Description
    90 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.35 A
  • Drain Source Resistance
    4000 to 5000 milliohm
  • Drain Source Breakdown Voltage
    90 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 2 V
  • Power Dissipation
    6.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Medical
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39
  • Applications
    Motor controls, Converters, Amplifiers, Switches, Power supply circuits, Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

Technical Documents
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