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APT38N60BC6

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The APT38N60BC6 from Microchip Technology is a MOSFET with Continous Drain Current 38 A, Drain Source Resistance 99 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for APT38N60BC6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    APT38N60BC6
  • Manufacturer
    Microchip Technology
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    38 A
  • Drain Source Resistance
    99 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    112 nC
  • Power Dissipation
    278 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247

Technical Documents
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