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DN3765

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The DN3765 from Microchip Technology is a MOSFET with Continous Drain Current 0.3 A, Drain Source Resistance 8000 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -20 to 20 V, Power Dissipation 2.5 W. Tags: Surface Mount. More details for DN3765 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DN3765
  • Manufacturer
    Microchip Technology
  • Description
    650 V, 0.3 A, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.3 A
  • Drain Source Resistance
    8000 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -20 to 20 V
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Normally-on switches, Solid state relays, Converters, Linear amplifiers, Constant current sources, Power supply circuits, Telecom

Technical Documents
View details on the manufacturer's website
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