1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Microchip Technology
  6. LND01

LND01

Download Datasheet Request Quote

Note : Your request will be directed to Microchip Technology.

LND01 Image

The LND01 from Microchip Technology is a MOSFET with Continous Drain Current 0.33 A, Drain Source Resistance 900 to 1400 milliohm, Drain Source Breakdown Voltage 9 V, Gate Source Voltage -12 to 0.6 V, Power Dissipation 0.36 W. Tags: Surface Mount. More details for LND01 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    LND01
  • Manufacturer
    Microchip Technology
  • Description
    9 V, 0.33 A, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.33 A
  • Drain Source Resistance
    900 to 1400 milliohm
  • Drain Source Breakdown Voltage
    9 V
  • Gate Source Voltage
    -12 to 0.6 V
  • Power Dissipation
    0.36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Normally-on Switches, Solid-state Relays, Converters, Constant Current Sources, Analog Switches

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products