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LND150N8-G

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The LND150N8-G from Microchip Technology is a MOSFET with Continous Drain Current 0.03 A, Drain Source Resistance 850000 to 1000000 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -20 to 20 V, Power Dissipation 1.6 W. Tags: Surface Mount. More details for LND150N8-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    LND150N8-G
  • Manufacturer
    Microchip Technology
  • Description
    500 V, 0.03 A, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.03 A
  • Drain Source Resistance
    850000 to 1000000 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -20 to 20 V
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    Solid state relays, Normally-on switches, Converters, Power supply circuits, Constant current sources, Input protection circuits

Technical Documents
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