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TN5335N8-G

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The TN5335N8-G from Microchip Technology is a MOSFET with Continous Drain Current 0.23 A, Drain Source Resistance 15000 milliohm, Drain Source Breakdown Voltage 350 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.6 to 2 V. Tags: Surface Mount. More details for TN5335N8-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    TN5335N8-G
  • Manufacturer
    Microchip Technology
  • Description
    350 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.23 A
  • Drain Source Resistance
    15000 milliohm
  • Drain Source Breakdown Voltage
    350 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.6 to 2 V
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Medical
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    Logic-Level Interfaces (Ideal for TTL and CMOS), Solid-State Relays, Battery-Operated Systems, Photovoltaic Drives, Analog Switches, General Purpose Line Drivers, Telecommunication Switches

Technical Documents
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