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BUK4D110-20P

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BUK4D110-20P Image

The BUK4D110-20P from Nexperia is a MOSFET with Continous Drain Current -6.7 to -4.2 A, Drain Source Resistance 75 to 189 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.3 to -0.6 V. Tags: Surface Mount. More details for BUK4D110-20P can be seen below.

Product Specifications

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Product Details

  • Part Number
    BUK4D110-20P
  • Manufacturer
    Nexperia
  • Description
    -12 to 12 V, 3.6 to 5 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6.7 to -4.2 A
  • Drain Source Resistance
    75 to 189 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.3 to -0.6 V
  • Gate Charge
    3.6 to 5 nC
  • Power Dissipation
    2 to 7.5 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT1220
  • Applications
    DC to DC conversion, High-speed line driver, High-side load switch, Switching circuits

Technical Documents
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