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BUK9M120-100E

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BUK9M120-100E Image

The BUK9M120-100E from Nexperia is a MOSFET with Continous Drain Current 8.1 to 11.5 A, Drain Source Resistance 96 to 340 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -15 to 15 V, Gate Source Threshold Voltage 0.5 to 2.45 V. Tags: Surface Mount. More details for BUK9M120-100E can be seen below.

Product Specifications

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Product Details

  • Part Number
    BUK9M120-100E
  • Manufacturer
    Nexperia
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.1 to 11.5 A
  • Drain Source Resistance
    96 to 340 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -15 to 15 V
  • Gate Source Threshold Voltage
    0.5 to 2.45 V
  • Gate Charge
    8.8 nC
  • Power Dissipation
    44 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT1210
  • Applications
    Automotive systems, Motors, lamps and solenoid control, Transmission control, Ultra high performance power switching

Technical Documents
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