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BUK9Y1R3-40H

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BUK9Y1R3-40H Image

The BUK9Y1R3-40H from Nexperia is a MOSFET with Continous Drain Current 190 A, Drain Source Resistance 0.67 to 3.9 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -10 to 16 V, Gate Source Threshold Voltage 0.6 to 2.5 V. Tags: Surface Mount. More details for BUK9Y1R3-40H can be seen below.

Product Specifications

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Product Details

  • Part Number
    BUK9Y1R3-40H
  • Manufacturer
    Nexperia
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    190 A
  • Drain Source Resistance
    0.67 to 3.9 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -10 to 16 V
  • Gate Source Threshold Voltage
    0.6 to 2.5 V
  • Gate Charge
    45.3 to 139 nC
  • Power Dissipation
    395 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT669
  • Applications
    Automotive systems, Motors, lamps and solenoid control, Start-Stop micro-hybrid applications, Transmission control, Ultra high performance power switching

Technical Documents
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