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NXV65UP

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NXV65UP Image

The NXV65UP from Nexperia is a MOSFET with Continous Drain Current -2.1 to -1.3 A, Drain Source Resistance 55 to 150 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.5 V. Tags: Surface Mount. More details for NXV65UP can be seen below.

Product Specifications

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Product Details

  • Part Number
    NXV65UP
  • Manufacturer
    Nexperia
  • Description
    -8 to 8 V, 5.8 to 8.7 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.1 to -1.3 A
  • Drain Source Resistance
    55 to 150 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.5 V
  • Gate Charge
    5.8 to 8.7 nC
  • Power Dissipation
    0.34 to 2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
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