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NXV90EP

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NXV90EP Image

The NXV90EP from Nexperia is a MOSFET with Continous Drain Current -1.5 to -1 A, Drain Source Resistance 98 to 210 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for NXV90EP can be seen below.

Product Specifications

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Product Details

  • Part Number
    NXV90EP
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 5.2 to 7.7 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.5 to -1 A
  • Drain Source Resistance
    98 to 210 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    5.2 to 7.7 nC
  • Power Dissipation
    0.34 to 2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
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