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PHB110NQ08T

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PHB110NQ08T Image

The PHB110NQ08T from Nexperia is a MOSFET with Continous Drain Current 75 A, Drain Source Resistance 7.7 to 18.9 Milliohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4 V. Tags: Surface Mount. More details for PHB110NQ08T can be seen below.

Product Specifications

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Product Details

  • Part Number
    PHB110NQ08T
  • Manufacturer
    Nexperia
  • Description
    75 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    75 A
  • Drain Source Resistance
    7.7 to 18.9 Milliohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4 V
  • Gate Charge
    113.1 nC
  • Power Dissipation
    230 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    DC-to-DC convertors, General industrial applications, Motors, lamps and solenoids, Uninterruptible power supplies

Technical Documents
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