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PHB191NQ06LT

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The PHB191NQ06LT from Nexperia is a MOSFET with Continous Drain Current 75 A, Drain Source Resistance 3.1 to 7.4 Milliohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage -15 to 15 V, Gate Source Threshold Voltage 0.5 to 2 V. Tags: Surface Mount. More details for PHB191NQ06LT can be seen below.

Product Specifications

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Product Details

  • Part Number
    PHB191NQ06LT
  • Manufacturer
    Nexperia
  • Description
    55 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    75 A
  • Drain Source Resistance
    3.1 to 7.4 Milliohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    -15 to 15 V
  • Gate Source Threshold Voltage
    0.5 to 2 V
  • Gate Charge
    95.6 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    DC-to-DC convertors, General industrial applications, Motors, lamps and solenoids, Uninterruptible power supplies

Technical Documents
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