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PHB33NQ20T

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PHB33NQ20T Image

The PHB33NQ20T from Nexperia is a MOSFET with Continous Drain Current 23.1 to 32.7 A, Drain Source Resistance 10 to 215 Milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.4 V. Tags: Surface Mount. More details for PHB33NQ20T can be seen below.

Product Specifications

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Product Details

  • Part Number
    PHB33NQ20T
  • Manufacturer
    Nexperia
  • Description
    200 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    23.1 to 32.7 A
  • Drain Source Resistance
    10 to 215 Milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.4 V
  • Gate Charge
    32.2 nC
  • Power Dissipation
    230 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    DC-to-DC primary side switching

Technical Documents
View details on the manufacturer's website
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