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PMCM6501UPE

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PMCM6501UPE Image

The PMCM6501UPE from Nexperia is a MOSFET with Continous Drain Current -7.3 to -3.5 A, Drain Source Resistance 22 to 79 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.9 to -0.4 V. Tags: Surface Mount. More details for PMCM6501UPE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMCM6501UPE
  • Manufacturer
    Nexperia
  • Description
    -8 to 8 V, 19.1 to 29 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -7.3 to -3.5 A
  • Drain Source Resistance
    22 to 79 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.9 to -0.4 V
  • Gate Charge
    19.1 to 29 nC
  • Power Dissipation
    0.556 to 12.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    WLCSP6
  • Applications
    Battery management, High-speed line driver, Low-side load switch, Switching circuits

Technical Documents
View details on the manufacturer's website
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