1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Nexperia
  6. PMCM6501VPE

PMCM6501VPE

Download Datasheet Request Quote

Note : Your request will be directed to Nexperia.

PMCM6501VPE Image

The PMCM6501VPE from Nexperia is a MOSFET with Continous Drain Current -8.2 to -4 A, Drain Source Resistance 19 to 60 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.9 to -0.4 V. Tags: Surface Mount. More details for PMCM6501VPE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PMCM6501VPE
  • Manufacturer
    Nexperia
  • Description
    -8 to 8 V, 19.6 to 29.4 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8.2 to -4 A
  • Drain Source Resistance
    19 to 60 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.9 to -0.4 V
  • Gate Charge
    19.6 to 29.4 nC
  • Power Dissipation
    0.556 to 12.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    WLCSP6
  • Applications
    Battery management, High-speed line driver, Low-side load switch, Switching circuits

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products