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PMCPB5530X

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PMCPB5530X Image

The PMCPB5530X from Nexperia is a MOSFET with Continous Drain Current -4.5 to 5.3 A, Drain Source Resistance 26 to 135 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.9 to 0.9 V. Tags: Surface Mount. More details for PMCPB5530X can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMCPB5530X
  • Manufacturer
    Nexperia
  • Description
    -12 to 12 V, 8.1 to 21.7 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.5 to 5.3 A
  • Drain Source Resistance
    26 to 135 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.9 to 0.9 V
  • Gate Charge
    8.1 to 21.7 nC
  • Power Dissipation
    0.49 to 8.33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT1118
  • Applications
    Charging switch for portable devices, DC-to-DC converters, Power management in battery-driven portables, Hard disk and computing power management

Technical Documents
View details on the manufacturer's website
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