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PMCXB1000UE

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PMCXB1000UE Image

The PMCXB1000UE from Nexperia is a MOSFET with Continous Drain Current -0.41 to 0.59 A, Drain Source Resistance 550 to 5100 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.95 to 0.95 V. Tags: Surface Mount. More details for PMCXB1000UE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMCXB1000UE
  • Manufacturer
    Nexperia
  • Description
    -8 to 8 V, 0.6 to 1.2 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.41 to 0.59 A
  • Drain Source Resistance
    550 to 5100 milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.95 to 0.95 V
  • Gate Charge
    0.6 to 1.2 nC
  • Power Dissipation
    0.285 to 4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT1216
  • Applications
    Relay driver, High-speed line driver, Level shifter, Power management in battery-driven portables

Technical Documents
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