1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Nexperia
  6. PMDPB58UPE

PMDPB58UPE

Download Datasheet Request Quote

Note : Your request will be directed to Nexperia.

PMDPB58UPE Image

The PMDPB58UPE from Nexperia is a MOSFET with Continous Drain Current -4.5 to -2.3 A, Drain Source Resistance 55 to 137 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.95 to -0.45 V. Tags: Surface Mount. More details for PMDPB58UPE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PMDPB58UPE
  • Manufacturer
    Nexperia
  • Description
    -8 to 8 V, 6.3 to 9.5 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.5 to -2.3 A
  • Drain Source Resistance
    55 to 137 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.95 to -0.45 V
  • Gate Charge
    6.3 to 9.5 nC
  • Power Dissipation
    0.515 to 8.33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT1118
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products