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PMDPB80XP

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PMDPB80XP Image

The PMDPB80XP from Nexperia is a MOSFET with Continous Drain Current -3.7 to -1.7 A, Drain Source Resistance 80 to 156 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for PMDPB80XP can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMDPB80XP
  • Manufacturer
    Nexperia
  • Description
    -12 to 12 V, 5.7 to 8.6 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.7 to -1.7 A
  • Drain Source Resistance
    80 to 156 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    5.7 to 8.6 nC
  • Power Dissipation
    0.485 to 6.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT1118
  • Applications
    Charging switch for portable devices, DC-to-DC converters, Power management in battery-driven portables, Hard disk and computing power management

Technical Documents
View details on the manufacturer's website
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