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PMDXB950UPE

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PMDXB950UPE Image

The PMDXB950UPE from Nexperia is a MOSFET with Continous Drain Current -0.5 to -0.3 A, Drain Source Resistance 1020 to 5000 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.95 to -0.45 V. Tags: Surface Mount. More details for PMDXB950UPE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMDXB950UPE
  • Manufacturer
    Nexperia
  • Description
    -8 to 8 V, 1.19 to 2.1 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.5 to -0.3 A
  • Drain Source Resistance
    1020 to 5000 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.95 to -0.45 V
  • Gate Charge
    1.19 to 2.1 nC
  • Power Dissipation
    0.265 to 4.025 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT1216
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
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