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PMGD175XNE

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PMGD175XNE Image

The PMGD175XNE from Nexperia is a MOSFET with Continous Drain Current 0.5 to 0.95 A, Drain Source Resistance 211 to 411 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.75 to 1.25 V. Tags: Surface Mount. More details for PMGD175XNE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMGD175XNE
  • Manufacturer
    Nexperia
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.5 to 0.95 A
  • Drain Source Resistance
    211 to 411 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.75 to 1.25 V
  • Gate Charge
    1.05 to 1.65 nC
  • Power Dissipation
    0.26 to 0.905 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT363
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
View details on the manufacturer's website
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