PMH1200UPE

Note : Your request will be directed to Nexperia.

PMH1200UPE Image

The PMH1200UPE from Nexperia is a MOSFET with Continous Drain Current -0.52 to -0.33 A, Drain Source Resistance 1300 to 7100 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.95 to -0.45 V. Tags: Surface Mount. More details for PMH1200UPE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PMH1200UPE
  • Manufacturer
    Nexperia
  • Description
    -10 to 10 V, 0.4 to 1 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.52 to -0.33 A
  • Drain Source Resistance
    1300 to 7100 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.95 to -0.45 V
  • Gate Charge
    0.4 to 1 nC
  • Power Dissipation
    0.38 to 2.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT8001
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents

Latest MOSFETs

View more products