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PMH850UPE

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PMH850UPE Image

The PMH850UPE from Nexperia is a MOSFET with Continous Drain Current -0.6 to -0.4 A, Drain Source Resistance 850 to 3600 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.95 to -0.45 V. Tags: Surface Mount. More details for PMH850UPE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMH850UPE
  • Manufacturer
    Nexperia
  • Description
    -8 to 8 V, 0.6 to 0.9 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.6 to -0.4 A
  • Drain Source Resistance
    850 to 3600 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.95 to -0.45 V
  • Gate Charge
    0.6 to 0.9 nC
  • Power Dissipation
    0.36 to 2.23 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT8001
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
View details on the manufacturer's website
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