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PMN280ENEA

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PMN280ENEA Image

The PMN280ENEA from Nexperia is a MOSFET with Continous Drain Current 0.9 to 1.2 A, Drain Source Resistance 285 to 1078 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.7 V. Tags: Surface Mount. More details for PMN280ENEA can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMN280ENEA
  • Manufacturer
    Nexperia
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.9 to 1.2 A
  • Drain Source Resistance
    285 to 1078 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.7 V
  • Gate Charge
    4.5 to 6.8 nC
  • Power Dissipation
    0.667 to 7.5 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT457
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
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