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PMN50EPE

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PMN50EPE Image

The PMN50EPE from Nexperia is a MOSFET with Continous Drain Current -6 to -2.9 A, Drain Source Resistance 35 to 72 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for PMN50EPE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMN50EPE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 12.8 to 20 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6 to -2.9 A
  • Drain Source Resistance
    35 to 72 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    12.8 to 20 nC
  • Power Dissipation
    0.56 to 6.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT457
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
View details on the manufacturer's website
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