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PMPB100ENE

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PMPB100ENE Image

The PMPB100ENE from Nexperia is a MOSFET with Continous Drain Current 2.4 to 5.1 A, Drain Source Resistance 54 to 130 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for PMPB100ENE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMPB100ENE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 3.5 to 5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.4 to 5.1 A
  • Drain Source Resistance
    54 to 130 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    3.5 to 5 nC
  • Power Dissipation
    2 to 10 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN2020MD-6
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
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