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PMPB12R5EP

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PMPB12R5EP Image

The PMPB12R5EP from Nexperia is a MOSFET with Continous Drain Current -12.5 to -5.6 A, Drain Source Resistance 12.5 to 24 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -1 V. Tags: Surface Mount. More details for PMPB12R5EP can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMPB12R5EP
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 29 to 44 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12.5 to -5.6 A
  • Drain Source Resistance
    12.5 to 24 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -1 V
  • Gate Charge
    29 to 44 nC
  • Power Dissipation
    1.9 to 12.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT1220-2
  • Applications
    Charging switch for portable devices, DC-to-DC converters, Power management in battery-driven portables, computing power management

Technical Documents
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