PMPB20EN

Note : Your request will be directed to Nexperia.

PMPB20EN Image

The PMPB20EN from Nexperia is a MOSFET with Continous Drain Current 4.6 to 10.4 A, Drain Source Resistance 16.5 to 32 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for PMPB20EN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PMPB20EN
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 7.2 to 10.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.6 to 10.4 A
  • Drain Source Resistance
    16.5 to 32 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    7.2 to 10.8 nC
  • Power Dissipation
    1.7 to 12.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    DFN2020MD-6
  • Applications
    Charging switch for portable devices, DC-to-DC converters, Power management in battery-driven portables, Hard disk and computing power management

Technical Documents

Latest MOSFETs

View more products