PMPB30XPE

Note : Your request will be directed to Nexperia.

PMPB30XPE Image

The PMPB30XPE from Nexperia is a MOSFET with Continous Drain Current -8.5 to -3.9 A, Drain Source Resistance 29 to 57 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 8 V, Gate Source Threshold Voltage -1.25 to -0.75 V. Tags: Surface Mount. More details for PMPB30XPE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PMPB30XPE
  • Manufacturer
    Nexperia
  • Description
    -12 to 8 V, 12.5 to 19 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8.5 to -3.9 A
  • Drain Source Resistance
    29 to 57 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 8 V
  • Gate Source Threshold Voltage
    -1.25 to -0.75 V
  • Gate Charge
    12.5 to 19 nC
  • Power Dissipation
    2 to 15 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT1220
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents

Latest MOSFETs

View more products