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PMT200EPE

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PMT200EPE Image

The PMT200EPE from Nexperia is a MOSFET with Continous Drain Current -2.4 to -1.5 A, Drain Source Resistance 130 to 250 Milliohm, Drain Source Breakdown Voltage -70 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for PMT200EPE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMT200EPE
  • Manufacturer
    Nexperia
  • Description
    70 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.4 to -1.5 A
  • Drain Source Resistance
    130 to 250 Milliohm
  • Drain Source Breakdown Voltage
    -70 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    10.6 to 15.9 nC
  • Power Dissipation
    0.8 to 8.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT223
  • Applications
    Relay driver, High-speed line driver, High-side load switch, Switching circuits

Technical Documents
View details on the manufacturer's website
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