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PMT560ENEA

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PMT560ENEA Image

The PMT560ENEA from Nexperia is a MOSFET with Continous Drain Current 0.7 to 1.1 A, Drain Source Resistance 527 to 1620 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.7 V. Tags: Surface Mount. More details for PMT560ENEA can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMT560ENEA
  • Manufacturer
    Nexperia
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.7 to 1.1 A
  • Drain Source Resistance
    527 to 1620 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.7 V
  • Gate Charge
    2.9 to 4.4 nC
  • Power Dissipation
    0.75 to 6.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT223
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
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