PMV30ENEA

Note : Your request will be directed to Nexperia.

PMV30ENEA Image

The PMV30ENEA from Nexperia is a MOSFET with Continous Drain Current 3.4 to 4.8 A, Drain Source Resistance 23 to 57 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for PMV30ENEA can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PMV30ENEA
  • Manufacturer
    Nexperia
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.4 to 4.8 A
  • Drain Source Resistance
    23 to 57 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    7.8 to 11.7 nC
  • Power Dissipation
    0.71 to 8.3 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents

Latest MOSFETs

View more products