PMX100UN

Note : Your request will be directed to Nexperia.

PMX100UN Image

The PMX100UN from Nexperia is a MOSFET with Continous Drain Current 0.8 to 1.3 A, Drain Source Resistance 122 to 360 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 0.9 V. Tags: Surface Mount. More details for PMX100UN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PMX100UN
  • Manufacturer
    Nexperia
  • Description
    -12 to 12 V, 1.5 to 2.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.8 to 1.3 A
  • Drain Source Resistance
    122 to 360 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 0.9 V
  • Gate Charge
    1.5 to 2.3 nC
  • Power Dissipation
    0.3 to 4.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT8013
  • Applications
    Battery management, High-speed line driver, Low-side load switch, Switching circuits

Technical Documents

Latest MOSFETs

View more products