PMXB120EPE

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PMXB120EPE Image

The PMXB120EPE from Nexperia is a MOSFET with Continous Drain Current -2.4 to -1.5 A, Drain Source Resistance 100 to 187 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for PMXB120EPE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMXB120EPE
  • Manufacturer
    Nexperia
  • Description
    30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.4 to -1.5 A
  • Drain Source Resistance
    100 to 187 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    6.2 to 11 nC
  • Power Dissipation
    0.4 to 8.33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT1215
  • Applications
    High-side load switch and charging switch for portable devices, Power management in battery driven portables, LED driver, DC-to-DC converter

Technical Documents

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