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PMXB350UPE

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PMXB350UPE Image

The PMXB350UPE from Nexperia is a MOSFET with Continous Drain Current -1.2 to -1 A, Drain Source Resistance 350 to 2000 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.95 to -0.45 V. Tags: Surface Mount. More details for PMXB350UPE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMXB350UPE
  • Manufacturer
    Nexperia
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.2 to -1 A
  • Drain Source Resistance
    350 to 2000 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.95 to -0.45 V
  • Gate Charge
    1.25 to 2.3 nC
  • Power Dissipation
    0.36 to 5.68 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT1215
  • Applications
    High-side load switch and charging switch for portable devices, Power management in battery driven portables, LED driver, DC-to-DC converter

Technical Documents
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