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PMXB360ENEA

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PMXB360ENEA Image

The PMXB360ENEA from Nexperia is a MOSFET with Continous Drain Current 0.7 to 1.1 A, Drain Source Resistance 345 to 887 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.7 V. Tags: Surface Mount. More details for PMXB360ENEA can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMXB360ENEA
  • Manufacturer
    Nexperia
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.7 to 1.1 A
  • Drain Source Resistance
    345 to 887 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.7 V
  • Gate Charge
    3 to 4.5 nC
  • Power Dissipation
    0.4 to 6.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT1215
  • Applications
    Relay driver, Power management in automotive and industrial applications, LED driver, DC-to-DC converter

Technical Documents
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