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PMXB65ENE

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PMXB65ENE Image

The PMXB65ENE from Nexperia is a MOSFET with Continous Drain Current 2.5 to 3.2 A, Drain Source Resistance 44 to 107 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for PMXB65ENE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMXB65ENE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 6 to 11 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.5 to 3.2 A
  • Drain Source Resistance
    44 to 107 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    6 to 11 nC
  • Power Dissipation
    0.4 to 8.33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT1215
  • Applications
    Low-side load switch and charging switch for portable devices, Power management in battery-driven portables, LED driver, DC-to-DC converters

Technical Documents
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