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PSMN012-100YS

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PSMN012-100YS Image

The PSMN012-100YS from Nexperia is a MOSFET with Continous Drain Current 43 to 60 A, Drain Source Resistance 10 to 35.8 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.95 to 4.6 V. Tags: Surface Mount. More details for PSMN012-100YS can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN012-100YS
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 64 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    43 to 60 A
  • Drain Source Resistance
    10 to 35.8 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.95 to 4.6 V
  • Gate Charge
    64 nC
  • Power Dissipation
    130 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Aerospace, Military, Medical
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    DC-to-DC converters, Lithium-ion battery protection, Load switching, Motor control, Server power supplies

Technical Documents
View details on the manufacturer's website
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