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PSMN016-100YS

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PSMN016-100YS Image

The PSMN016-100YS from Nexperia is a MOSFET with Continous Drain Current 36 to 51 A, Drain Source Resistance 12.7 to 45.6 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.7 V. Tags: Surface Mount. More details for PSMN016-100YS can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN016-100YS
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 54 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    36 to 51 A
  • Drain Source Resistance
    12.7 to 45.6 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.7 V
  • Gate Charge
    54 nC
  • Power Dissipation
    117 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    DC-to-DC converters, Lithium-ion battery protection, Load switching, Motor control, Server power supplies

Technical Documents
View details on the manufacturer's website
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