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PSMN040-100MSE

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PSMN040-100MSE Image

The PSMN040-100MSE from Nexperia is a MOSFET with Continous Drain Current 21 to 30 A, Drain Source Resistance 29.4 to 99 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.6 V. Tags: Surface Mount. More details for PSMN040-100MSE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN040-100MSE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 24 to 30 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21 to 30 A
  • Drain Source Resistance
    29.4 to 99 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.6 V
  • Gate Charge
    24 to 30 nC
  • Power Dissipation
    91 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK33
  • Applications
    High power PoE applications, EEE802.3at and proprietary solutions

Technical Documents
View details on the manufacturer's website
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